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United States Patent 5,843,363
Mitwalsky, et. al. Dec. 1, 1998

Ablation patterning of multi-layered structures

Abstract

A process for ablation etching through one or more layers of dielectric materials while not etching an underlying conductive material layer comprises selecting parameters whereby the ablation process automatically stops when the conductive material layer is reached, or monitoring the process for end point detection of the desired degree of ablation. Parameters selected are the absorptivity of the dielectric layer versus that of the conductive material layer. End point detection includes monitoring radiant energy reflected from the workpiece or the content of the materials being ablated from the workpiece.


Inventors: Mitwalsky; Alexander (Poughkeepsie, NY); Ryan; James Gardner (Newtown, CT); Wassick; Thomas Anthony (Wappingers Falls, NY).
Assignee: Siemens Aktiengesellschaft (Munich, DE); International Business Machines Corporation (Armonk, NY).
Appl. No.: 414,241
Filed: Mar. 31, 1995
Intl. Cl. : B23K 26/00, B32B 31/18
Current U.S. Cl.: 264/400; 219/121.71; 264/156; 264/409; 425/174.4
Field of Search: 264/400, 154, 155, 156, 408, 409; 425/174.4; 156/643.1; 219/121.67, 121.7, 121.71

References Cited | [Referenced By]

U.S. Patent Documents
Re33,622Jun., 1991Lee et al. 156/643.1
4,414,059Nov., 1983Blum et al.
4,508,749Apr., 1985Brannon et al.
4,684,437Aug., 1987Donelon et al. 156/643
4,842,677Jun., 1989Wojnarowski et al.
4,894,115Jan., 1990Eichelberger et al.
5,151,135Sept., 1992Magee et al. 134/1
5,198,388Mar., 1993Kawai 437/173
5,227,013Jul., 1993Kumar
5,236,551Aug., 1993Pan 156/643
5,281,798Jan., 1994Hamm et al.
5,336,636Aug., 1994Burmer 437/173
5,338,393Aug., 1994Burmer 156/643
5,386,430Jan., 1995Yamagishi et al.
5,411,918May, 1995Keible et al.

Primary Examiner: Vargot; Mathieu D.
Attorney, Agent or Firm: Braden; Stanton C.

14 Claims, 4 Drawing Figures

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